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  unisonic technologies co., ltd he8051 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2007 unisonic technologies co., ltd qw-r201-046.b  low voltage high current small signal npn transistor description the utc he8051 is a low voltage high current small signal npn transistor, designed for class b push-pull 2w audio amplifier for portable radio and general purpose applications. features * collector current up to 1.5a * collector-emitter voltage up to 25 v * complimentary to utc he8551 to-92 1 *pb-free plating product number: he8051l ordering information order number pin assignment normal lead free plating package 1 2 3 packing he8051-x-t92-b he8051l-x-t92-b to-92 e b c tape box HE8051-X-T92-K he8051l-x-t92-k to-92 e b c bulk he8051l-x-t 92-b (1)packing type (2)package type (3)rank (4)lead plating (1) b: tape box, k: bulk (2) t92: to-92 (3) x: refer to classification of h fe2 (4) l: lead free plating, blank: pb/sn 
he8051 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-046.b absolute maximum ratings (ta=25 
, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v collector dissipation (ta=25 c) p c 1 w collector current i c 1.5 a junction temperature t j +150 storage temperature t stg -40 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 40 v collector-emitter breakdown voltage bv ceo i c =2ma, i b =0 25 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 6 v collector cut-off current i cbo v cb =35v, i e =0 100 na emitter cut-off current i ebo v eb =6v, i c =0 100 na h fe1 v ce =1v, i c =5ma 45 135 h fe2 v ce =1v, i c =100ma 85 160 500 dc current gain h fe3 v ce =1v, i c =800ma 40 110 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1.0 v current gain bandwidth product f t v ce =10v, i c =50ma 100 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 9.0 pf classification of h fe2 rank c d e range 120-200 160-300 250-500 
he8051 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-046.b typical characteristics fig. 1 static characteristics collector-emitter voltage, v ce ( v) collector current, i c (ma) 0 0.4 0.8 1.2 1.6 2.0 0 0. 1 0. 2 0. 3 0. 4 0. 5 fig. 2 dc current gain collector current, i c (ma) dc current gain, h fe v ce =1v 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 i b =3.0ma i b =2.5ma i b =2.0ma i b =1.0ma i b =1.5ma i b =0.5ma    fig. 3 base-emitter on voltage collector current, i c (ma) saturation voltage, v be & v ce (mv) fig. 4 saturation voltage i c =10i b 10 0 0.2 0.6 0.8 1.0 1.2 base-emitter voltage, v be (v) 0.4 collector current, i c (ma) 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 10 2 10 3 v be(sat) v ce(sat) v ce =1v 10 1 10 2 10 3    fig. 5 current gain-bandwidth product fig. 6 collector output capacitance collector current, i c (ma) current gain-bandwidt h product, f t (mhz) v ce =10v collector-base voltage, v cb (v) capacitance, c ob (pf) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 f=1mhz i e =0 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3   
he8051 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-046.b                                                                                              utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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